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8inch 200mm Polishing Silicon Carbide Ingot Substrate SiC Chip Production Grade For MOS
Product Details:
| Place of Origin: | CHINA |
| Brand Name: | ZMKJ |
| Certification: | ROHS |
| Model Number: | 8inch sic wafers 4h-n |
Payment & Shipping Terms:
| Minimum Order Quantity: | 1pcs |
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| Price: | by case |
| Packaging Details: | single wafer package in 100-grade cleaning room |
| Delivery Time: | 3-6 months |
| Payment Terms: | T/T, Western Union, MoneyGram |
| Supply Ability: | 1-20pcs/month |
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Detail Information |
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| Material: | SiC Single Crystal | Grade: | Production Grade |
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| Delivery Date: | 3 Months | Application: | Device Maker Polishing Test MOS |
| Diameter: | 200±0.5mm | MOQ: | 1 |
| High Light: | Production Grade SiC Chip,Ingot Polishing Silicon Carbide Substrate,200mm SiC Chip |
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Product Description
SiC Substrate/Wafers (150mm, 200mm) Silicon Carbide Ceramic Excellent CorrosionSingle crystal single side polished silicon wafer sic wafer polishing wafer manufacturer Silicon Carbide SiC Wafer 4H-N SIC ingots/200mm SiC Wafers 200mm SiC Wafers
About Silicon Carbide (SiC)Crystal
Silicon carbide (SiC), or carborundum, is a semiconductor containing silicon and carbon with the chemical formula SiC. SiC is used in semiconductor electronics devices operating at high temperatures, high voltages, or both. SiC is also one of the important LED components, it is a popular substrate for growing GaN devices and serves as a heat spreader in high-power LEDs.
| Property | 4H-SiC, Single Crystal | 6H-SiC, Single Crystal |
| Lattice Parameters | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
| Stacking Sequence | ABCB | ABCACB |
| Mohs Hardness | ≈9.2 | ≈9.2 |
| Density | 3.21 g/cm3 | 3.21 g/cm3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index @750nm |
no = 2.61 ne = 2.66 |
no = 2.60 ne = 2.65 |
| Dielectric Constant | c~9.66 | c~9.66 |
| Thermal Conductivity (N-type, 0.02 ohm.cm) |
a~4.2 W/cm·K@298K c~3.7 W/cm·K@298K |
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| Thermal Conductivity (Semi-insulating) |
a~4.9 W/cm·K@298K c~3.9 W/cm·K@298K |
a~4.6 W/cm·K@298K c~3.2 W/cm·K@298K |
| Band-gap | 3.23 eV | 3.02 eV |
| Break-Down Electrical Field | 3-5×106V/cm | 3-5×106V/cm |
| Saturation Drift Velocity | 2.0×105m/s | 2.0×105m/s |
To overcome these challenges and obtain high quality 200mm SiC wafers,solutions are proposed:
In terms of 200mm seed crystal preparation, appropriate temperature field, flow field, and expanding assemblwere studied and designed to take into account crystal quality and expanding size; Starting with a 150mm SiCseed crystal, carry out seed crystal iteration to gradually expand the SiC crystal size until it reaches 200mm;Throuch multiple crystal growth and processing, gradually optimize the crystal quality in the crystal expandingarea, and improve the quality of 200mm seed crystals.
n terms of 200mm conductive crvstal and substrate preparation. research has optimized the temperature fieland flow field design for large size crystal growth, conduct 200mm conductive SiC crystal growth, and controldoping uniformity. After rough processing and shaping of the crystal, an 8-inch electrically conductive 4H-SiCingot with a standard diameter was obtained. After cutting, grinding, polishing, processing to obtain SiC 200mmwafers with a thickness of 525um or so.
SiC Application
Due to SiC physical and electronic properties, Silicon Carbide-based devices are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices, compared with Si and GaAs-based device.
Optoelectronic Devices
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SiC-based devices are
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low lattice mismatch fall-nitride epitaxial layers
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high thermal conductivity
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monitoring of combustion processes
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all sorts of UV-detection
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Due to SiC material properties, SiC-based electronics and devices can work in very hostile environments, which can work under high temperatures, high power, and high radiation conditions